Diodes DMN2014LHAB User Manual
Product summary, Description, Applications
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DMN2014LHAB
Document number: DS36441 Rev. 1 - 2
1 of 6
December 2013
© Diodes Incorporated
DMN2014LHAB
ADVAN
CE I
N
F
O
RM
ATI
O
N
D1
S1
G1
Gate Protection
Diode
D2
S2
G2
Gate Protection
Diode
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
20V
13mΩ @ V
GS
= 4.5V
9.0A
14mΩ @ V
GS
= 4.0V
8.7A
17mΩ @ V
GS
= 3.1V
8.0A
18mΩ @ V
GS
= 2.5V
6.7A
28mΩ @ V
GS
= 1.8V
6.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power management functions
Battery
Pack
Load
Switch
Features
Low
On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
U-DFN2030-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.012 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN2014LHAB-7
U-DFN2030-6
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
24W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 12 for 2012)
WW = Week code (01 to 53)
Bottom View
U-DFN2030-6
24W
Y
Y
W
W
Equivalent Circuit
Top View
ESD PROTECTED TO 2kV