Diodes DMN2013UFX - Manual (Page 4)

DMN2013UFX
Document number: DS36657 Rev. 2 - 2
4 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N)

V = 4.5V
I = 10A
GS
D
V = V
I = 5.0A
GS
D
2.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I = 1mA
D
I = 250µA
D
V
, G
A
T
E
THRE
S
H
O
LD
VO
LT
AG
E (
V
)
GS
(t
h
)
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 85°C
A
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0 4 8 12 16 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50 55 60
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 10V
I = A
DS
D
8.5