Diodes DMN2004VK User Manual
Dmn2004vk, Features, Mechanical data
DMN2004VK
Document number: DS30865 Rev. 5 - 2
1 of 6
March 2012
© Diodes Incorporated
DMN2004VK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual
N-Channel
MOSFET
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Ultra-Small Surface Mount Package
•
Lead Free By Design/RoHS Compliant (Note 1)
•
ESD Protected Gate up to 2kV
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT563
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.006 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN2004VK-7
SOT563
3000/Tape & Reel
DMN2004VK-13
SOT563
10000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT563
Top View
Top View
Internal Schematic
Bottom View
ESD protected up to 2kV
S
1
D
1
D
2
S
2
G
1
G
2
NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
NAB YM