Diodes DMN1150UFB User Manual
Product summary, Description, Applications
DMN1150UFB
Document number: DS36101 Rev. 3 - 2
1 of 6
February 2013
© Diodes Incorporated
DMN1150UFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
12V
0.15
Ω @ V
GS
= 4.5V
1.41A
0.185
Ω @ V
GS
= 2.5V
1.25A
0.21
Ω @ V
GS
= 1.8V
1.16A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC
Converters
•
Power management functions
Features
• Low
On-Resistance
•
Very Low Gate Threshold Voltage V
GS(TH)
, 1.0V max
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected Gate
•
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X1-DFN1006-3
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
•
Weight: 0.001 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN1150UFB-7B
X1-DFN1006-3
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
X1-DFN1006-3
Top View
Internal Schematic
Bottom View
E5 = Product Type Marking Code
Bar Denotes Gate and Source Side
Top View
D
S
G
ESD PROTECTED
Equivalent Circuit
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
E5