Diodes DMG6968UTS - Manual (Page 4)

DMG6968UTS
Document number: DS31793 Rev. 5 - 2
4 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG6968UTS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE THR
ESHO
L
D VOL
T
AG
E
(
V
)
GS(
T
H
)
I = 1mA
D
I = 250µA
D
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0 4 8 12 16 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
0 2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
I
, L
EAK
A
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
10
100
0.1 1 10 100
R
Limited
DS(on)
Fig. 11 Safe Operation Area
- DS
V , DRAIN-SOURCE VOLTAGE (V)
-I
, DRAIN CURRENT
(
A
)
D
T = 150°C
T = 25°C
Single Pulse
J(m ax)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0
1
2
3
4
5
6
7
8
9
10
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,000
P
,
P
EAK
T
R
ANSI
E
N
T
P
O
IWE
R
(W
)
(PK)
Single Pulse
R
= 157 C/W
R = r * R
T - T = P * R
θ
θ
θ
θ
JA
JA(t) (t) JA
J A JA(t)
°