Dmg3420u new prod uc t, Dmg3420u – Diodes DMG3420U User Manual
Page 4
DMG3420U
Document number: DS31867 Rev. 5 - 2
4 of 6
September 2013
© Diodes Incorporated
DMG3420U
NEW PROD
UC
T
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0
4
8
12
16
20
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
0
5
10
15
20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
pF
)
10
100
1,000
f = 1MHz
C
iss
C
oss
C
rss
0
5
10
15
20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I,
D
R
AI
N
-S
O
U
R
C
E
L
EAKA
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
10
100
0.1
1
10
100
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T
= 150°C
T = 25°C
J(max)
A
V
= 10V
Single Pulse
GS
DUT on 1 * MRP Board
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D