Dmg3420u new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG3420U User Manual
Page 2: Electrical characteristics, Dmg3420u

DMG3420U
Document number: DS31867 Rev. 5 - 2
2 of 6
September 2013
© Diodes Incorporated
DMG3420U
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
5.47
3.43
A
Pulsed Drain Current (Note 7)
I
DM
20 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 6)
P
D
0.74 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 6)
R
θJA
167 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1.0 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100
nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.5 0.95 1.2 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
21 29
m
V
GS
= 10V, I
D
= 6A
25 35
V
GS
= 4.5V, I
D
= 5A
34 48
V
GS
= 2.5V, I
D
= 4A
65 91
V
GS
= 1.8V, I
D
= 2A
Forward Transfer Admittance
|Y
fs
|
— 9 — S
V
DS
= 5V, I
D
= 3.8A
Diode Forward Voltage
V
SD
— 0.75 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
434.7
—
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
69.1
—
pF
Reverse Transfer Capacitance
C
rss
—
61.2
—
pF
Gate Resistance
R
g
—
1.53
—
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
—
5.4
—
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A
Gate-Source Charge
Q
gs
—
0.9
—
nC
Gate-Drain Charge
Q
gd
—
1.5
—
nC
Turn-On Delay Time
t
D(on)
— 6.5 — ns
V
DD
= 10V, V
GS
= 5V,
R
L
= 1.7
, R
G
= 6
Turn-On Rise Time
t
r
— 8.3 — ns
Turn-Off Delay Time
t
D(off)
— 21.6 — ns
Turn-Off Fall Time
t
f
— 5.3 — ns
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.