Diodes DMG1012T - Manual (Page 4)

DMG1012T
Document number: DS31783 Rev. 3 - 2
4 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMG1012T
NEW PROD
UC
T
0
0.4
0.8
1.2
1.6
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
I = 250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0
2
4
6
8
10
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
1
10
100
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
oss
C
rss
1
10
100
1,000
0 4 8 12 16 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N-
S
O
U
R
C
E L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(
t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 486°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1