Dmg1012t new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG1012T User Manual
Page 2: Electrical characteristics, Dmg1012t
DMG1012T
Document number: DS31783 Rev. 3 - 2
2 of 6
January 2012
© Diodes Incorporated
DMG1012T
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±6 V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25
°C
T
A
= 85
°C
I
D
0.63
0.45
A
Pulsed Drain Current
I
DM
6 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 4)
P
D
0.28 W
Thermal Resistance, Junction to Ambient
R
θJA
452 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current T
J
= 25°C
I
DSS
- -
100
nA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±1.0
μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.5 - 1.0 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
-
0.3 0.4
Ω
V
GS
= 4.5V, I
D
= 600mA
0.4 0.5
V
GS
= 2.5V, I
D
= 500mA
0.5 0.7
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
- 1.4 - S
V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage (Note 5)
V
SD
0.7
1.2
V
V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
- 60.67 -
pF
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 9.68 - pF
Reverse Transfer Capacitance
C
rss
- 5.37 - pF
Total Gate Charge
Q
g
- 736.6 -
pC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
- 93.6 - pC
Gate-Drain Charge
Q
gd
- 116.6 -
pC
Turn-On Delay Time
t
D(on)
-
5.1
- ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47
Ω, R
G
= 10
Ω,
I
D
= 200mA
Turn-On Rise Time
t
r
-
7.4
- ns
Turn-Off Delay Time
t
D(off)
-
26.7
- ns
Turn-Off Fall Time
t
f
-
12.3
- ns
Notes:
4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.