Diodes FCX705 - Manual (Page 3)

FCX705
S E M I C O N D U C T O R S
ISSUE 4 - DECEMBER 2002
3
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
-140 V I
C
= -100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
-120 V I
C
= -10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
-10 V I
E
= -100 ␮A
Collector Cut-Off Current I
CBO
-100
-10
nA
µA
V
CB
= -10V
V
CB
= -120V
Tamb = 100°C
Emitter Cut-Off Current I
EBO
-0.1 µA V
EB
= -8V
Collector Emitter Cut-Off Current I
CES
-10 µA V
CES
= -120V
Collector-Emitter Saturation
Voltage V
CE(sat)
-1.3
-2.5
V
V
I
C
= -1A, I
B
= -1mA*
I
C
= -2A, I
B
= -2mA*
Base-Emitter Saturation Voltage V
BE(sat)
-1.8 V I
C
= -1A, I
B
= -1mA*
Base-Emitter Turn-On Voltage V
BE(on)
-1.7 V I
C
= -1A, V
CE
= -5V*
Static Forward Current Transfer
Ratio h
FE
3K
3K
3K
2K
30K
I
C
= -10mA, V
CE
= -5V*
I
C
= -100mA, V
CE
= -5V*
I
C
= -1A, V
CE
= -5V*
I
C
= -2A, V
CE
= -5V*
Transition Frequency f
T
160 MHz I
C
= -100mA, V
CE
= -10V
f= 20MHz
Input Capacitance C
ibo
90 pF V
CB
= -500mV, f= 1MHz
Output Capacitance C
obo
15 pF V
CB
= -10V, f= 1MHz
Turn-On Time t
(on)
0.6 µs I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
Turn-Off Time t
(off)
0.8 µs I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
Nb. Spice parameter data is available upon request for this device.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).