Diodes MIMD10A - Manual (Page 2)

DS30381 Rev. 8 - 2 2 of 4
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MIMD10A
© Diodes Incorporated
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UC
T
Electrical Characteristics PNP Section Tr1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
-0.3 ⎯ ⎯ V
CC
= -5V, I
O
= -100 μA
Input Voltage
V
l(on)
⎯ ⎯ -1.5
V
V
O
= 0.3, I
O
= -100mA
Output Voltage V
O(on)
⎯ -0.1 -0.3 V I
O
= -100mA/-5mA
Input Current I
l
⎯ ⎯ -25 mA V
I
= -2V
Output Current I
O(off)
⎯ ⎯ -0.5 μA V
CC
= -50V, V
I
= 0V
DC Current Gain G
l
68 ⎯ ⎯ ⎯ ⎯
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= -10V, I
E
= -50mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 ⎯ ⎯ V I
C
= 50 μA
Collector-Emitter Breakdown Voltage BV
CEO
50 ⎯ ⎯ V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
5 ⎯ ⎯ V I
E
= 50 μA
Collector Cutoff Current I
CBO
⎯ ⎯ 0.5 μA V
CB
= 50V
Emitter Cutoff Current I
EBO
⎯ ⎯ 0.5 μA V
EB
= 4V
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 0.3 V I
C
/I
B
= 10mA / 1.0mA
DC Current Transfer Ratio h
FE
100 250 600 ⎯ I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product* f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only