Diodes DDTA114YLP - Manual (Page 2)

DDTA114YLP
Document number: DS30807 Rev. 6 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
DDTA114YLP
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage V CC
-50 V
Input Voltage V
IN
+6 to -40 V
Output Current I
O
-70 mA
Output (Collector) Current I C(MAX)
-100 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
250 mW
Power Derating above 25°C P der
2 mW/°C
Thermal Resistance, Junction to Ambient Air (Note 4)
(Equivalent to one heated junction of PNP)
R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics: Discrete PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics (Note 5)
Collector-Base Breakdown Voltage
BV
CBO
-50 ⎯ ⎯ V I
C
= -10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage BV
CEO
-50 ⎯ ⎯ V I
C
= -1.0mA, I
B
= 0
Collector-Base Cut Off Current I CBO
⎯ ⎯ -0.1 μA
V CB = -50V, I E = 0
Collector-Emitter Cut Off Current, I
O(off)
I
CEO
⎯ ⎯ -0.5 μA
V
CB
= -50V, I
B
= 0
Emitter-Base Cut Off Current I
EBO
⎯ ⎯ -0.2 mA V
EB
= 4V, I
C
= 0
Input Off Voltage V I(off)
⎯ ⎯ -0.3 V V CC = -5V, I O = -100uA
On Characteristics (Note 5)
Input-On Voltage
V
I(on)
-1.4 ⎯ ⎯ V V
O
= -0.3V, I
O
= I
C
= 1mA
Input Current I
I
⎯ ⎯ -0.88 mA V
I
= -5V
DC Current Gain h
FE
80 ⎯ ⎯ ⎯
V
CE
= -5V, I
C
= -5mA
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ -0.25 V I
C
= -50mA, I
B
= -2.5mA
Output On Voltage V O(on)
⎯ -0.1 -0.3 V I I = -0.25mA, I O = -5mA
Input Resistance R1 7 10 13 K Ω ⎯
Resistance Ratio (R2/R1) 3.7 4.7 5.7 ⎯ ⎯
Small Signal Characteristics
Current Gain-Bandwidth Product
f
T
⎯ 250 ⎯ MHz V
CE
= -10V, I
E
= -5mA, f = 100 MHz
Notes: 4. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”.
5. Short duration pulse test used to minimize self-heating effect. Pulse width tp
<300μS, Duty Cycle, d≤2%.