Fzt957, Electrical characteristics, A product line of diodes incorporated – Diodes FZT957 User Manual
Page 4
FZT957
Da
tasheet Number: DS33191 Rev. 5 - 2
4 of 7
May 2014
© Diodes Incorporated
FZT957
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-330 -440 —
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CER
-330 -440 —
V
I
C
= -1µA,
R
B
≤
1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-300 -400 —
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8 — V
I
E
= -100µA
Collector Cutoff Current
I
CBO
—
—
<1
—
-50
-1
nA
µA
V
CB
= -300V
V
CB
= -300V, T
A
= +100°C
Collector Cutoff Current
I
CER
R
≤1kΩ
—
—
<1
—
-50
-1
nA
µA
V
CB
= -300V
V
CB
= -300V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
— <1 -10 nA
V
EB
= -6V
DC current transfer Static ratio (Note 10)
h
FE
100 200 -
—
I
C
= -10mA, V
CE
= -10V
100 200 300
I
C
= -0.5A, V
CE
= -10V
90 170 —
I
C
= -1A, V
CE
= -10V
— 10 —
I
C
= -2A, V
CE
= -10V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
— -60 -100
mV
I
C
= -100mA, I
B
= -10mA
— -110 -165
I
C
= -500mA, I
B
= -100mA
— -170 -240
I
C
= -1A, I
B
= -300mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
— -910
-1150 mV
I
C
= -1A, I
B
= -300mA
Base-Emitter Turn-on Voltage (Note 10)
V
BE(on)
— -750
-1020 mV
I
C
= -1A, V
CE
= -10V
Transitional Frequency (Note 10)
f
T
— 85 — MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output capacitance
C
obo
— 23 — pF
V
CB
= -20V, f = 1MHz
Switching Time
t
ON
—
108
—
ns
V
CC
= -100V, I
C
= -500mA,
I
B1
= -I
B2
=
-50mA
t
OFF
—
2500
—
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.