Electrical characteristics, Fzt855, A product line of diodes incorporated – Diodes FZT855 User Manual
Page 4
FZT855
Document Number DS33176 Rev. 5 - 2
4 of 7
March 2013
© Diodes Incorporated
FZT855
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
250 375
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CER
250 375
V
I
C
= 1µA,R
B
≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
150 180
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
50
1
nA
µA
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
Collector Cut-off Current
I
CER
R ≤ 1kΩ
50
1
nA
µA
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
Emitter Cut-off Current
I
EBO
10 nA
V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
20
35
60
260
40
65
110
355
mV
I
C
= 100mA, I
B
= 5mA
I
C
=500mA, I
B
= 50mA
I
C
=1A, I
B
= 100mA
I
C
=5A, I
B
= 500mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
1250 mV
I
C
=5A, I
B
= 500mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
1100 mV
I
C
= 5A, V
CE
= 5V
DC Current Gain (Note 9)
h
FE
100
100
15
200
200
30
10
300
I
C
= 10mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 5A, V
CE
= 5V
I
C
= 10A, V
CE
= 5V
Current Gain-Bandwidth Product (Note 9)
f
T
90
MHz
V
CE
= 10V, I
C
= 100mA
f = 50MHz
Output Capacitance (Note 9)
C
obo
22
pF
V
CB
= 10V. f = 1MHz
Switching Times
t
on
t
off
66
2130
ns
ns
I
C
= 1A, V
CC
= 50V
I
B1
= -I
B2
= 100mA
Notes:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%