Electrical characteristics, Fzt560, A product line of diodes incorporated – Diodes FZT560 User Manual
Page 4
FZT560
Document Number DS33140 Rev. 2 - 2
4 of 7
December 2013
© Diodes Incorporated
FZT560
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-500
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-500
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7
V
I
E
= -100µA
Collector Cut-off Current
I
CBO
-100 nA
V
CB
= -500V
Collector Cut-off Current
I
CES
-100 nA
V
CE
= -500V
Emitter Cut-off Current
I
EBO
-100 nA
V
EB
= -5.6V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
-200
mV
I
C
= -20mA, I
B
= -2mA
-500
I
C
= -50mA, I
B
= -10mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
-900 mV
I
C
= -50mA, I
B
= -10mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
-900 mV
I
C
= -50mA, V
CE
= -10V
DC Current Gain (Note 10)
h
FE
100
300
I
C
= -1mA, V
CE
= -10V
80
300
I
C
= -50mA, V
CE
= -10V
15
I
C
= -100mA, V
CE
= -10V
Current Gain-Bandwidth Product
f
T
60
MHz
V
CE
= -20V, I
C
= -10mA
f = 50MHz
Turn-On Time
t
on
110
ns
V
CC
= -100V, I
C
= -50mA
I
B1
= -5mA, I
B2
= 10mA
Turn-Off Time
t
off
1.5
µs
Output Capacitance
C
obo
8 pF
V
CB
= -20V, f = 1MHz
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%