Fzt558, Electrical characteristics – Diodes FZT558 User Manual
Page 3

FZT558
Document number: DS33139 Rev.3 - 2
3 of 6
November 2012
© Diodes Incorporated
FZT558
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-400
−
−
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
-400
−
−
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7
−
−
V
I
E
= -100µA
Collector Cut-off Current
I
CBO
−
−
-100
nA
V
CB
= -320V
Collector Cut-off Current
I
CES
−
−
-100
nA
V
CES
= -320V
Emitter Cut-off Current
I
EBO
−
−
-100
nA
V
EB
= -5V
Collector-Emitter Saturation Voltage (Note 8)
V
CE(sat)
−
−
−
−
-0.2
-0.5
V
I
C
= -20mA, I
B
= -2mA
I
C
= -50mA, I
B
= -6mA
Base-Emitter Saturation Voltage (Note 8)
V
BE(sat)
−
−
-0.9
V
I
C
= -50mA, I
B
= -5mA
Base-Emitter Turn-On Voltage (Note 8)
V
BE(on)
−
−
-0.9
V
I
C
= -50mA, V
CE
= -10V
DC current transfer Static ratio (Note 8)
h
FE
100
100
15
−
−
−
−
300
−
I
C
= -1mA, V
CE
= -10V
I
C
= -50mA, V
CE
= -10V
I
C
= -100mA, V
CE
= -10V
Transitional Frequency (Note 8)
f
T
50
−
−
MHz
V
CE
= -20V, I
C
= -10mA
f = 20MHz
Output Capacitance (Note 8)
C
obo
−
−
5
pF
V
CB
= -20V. f = 1MHz
Switching times
t
on
−
95
-
nS
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
t
off
1600
Notes:
8. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%