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Fzt558, Electrical characteristics – Diodes FZT558 User Manual

Page 3

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FZT558

Document number: DS33139 Rev.3 - 2

3 of 6

www.diodes.com

November 2012

© Diodes Incorporated

FZT558

A Product Line of

Diodes Incorporated


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-400

V

I

C

= -100µA

Collector-Emitter Breakdown Voltage (Note 8)

BV

CEO

-400

V

I

C

= -1mA

Emitter-Base Breakdown Voltage

BV

EBO

-7

V

I

E

= -100µA

Collector Cut-off Current

I

CBO

-100

nA

V

CB

= -320V

Collector Cut-off Current

I

CES

-100

nA

V

CES

= -320V

Emitter Cut-off Current

I

EBO

-100

nA

V

EB

= -5V

Collector-Emitter Saturation Voltage (Note 8)

V

CE(sat)

-0.2
-0.5

V

I

C

= -20mA, I

B

= -2mA

I

C

= -50mA, I

B

= -6mA

Base-Emitter Saturation Voltage (Note 8)

V

BE(sat)

-0.9

V

I

C

= -50mA, I

B

= -5mA

Base-Emitter Turn-On Voltage (Note 8)

V

BE(on)

-0.9

V

I

C

= -50mA, V

CE

= -10V

DC current transfer Static ratio (Note 8)

h

FE

100
100

15

300

I

C

= -1mA, V

CE

= -10V

I

C

= -50mA, V

CE

= -10V

I

C

= -100mA, V

CE

= -10V

Transitional Frequency (Note 8)

f

T

50

MHz

V

CE

= -20V, I

C

= -10mA

f = 20MHz

Output Capacitance (Note 8)

C

obo

5

pF

V

CB

= -20V. f = 1MHz

Switching times

t

on

95

-

nS

I

C

=-50mA, V

C

=-100V

I

B1

=5mA, I

B2

=-10mA

t

off

1600

Notes:

8. Measured under pulsed conditions. Pulse width

300µs. Duty cycle

2%