Diodes FZT558 - Manual (Page 2)

FZT558
Document number: DS33139 Rev.3 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
FZT558
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-400 V
Collector-Emitter Voltage V
CEO
-400 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I C
-200 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
2 W
(Note 6) 3 W
Thermal Resistance, Junction to Ambient
(Note 5)
R
θ JA
62.5 °
C/W
(Note 6) 41.7 ° C/W
Thermal Resistance, Junction to Leads (Note 7) R
θ JL
19.41 ° C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °
C
Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
Thermal Characteristics and Derating Information
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
50mm x 50mm
2oz FR4
25mm x 25mm
2oz FR4
Derating Curve
Temperature (°C) M
a
x
P
o
w
e
r
D
is
s
ip
a
ti
o
n
(
W
)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
T
amb
=25°C
25mm x 25mm
2oz FR4
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
(
°C
/W
)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s) M
a
x
P
o
w
e
r
D
is
s
ip
a
ti
o
n
(
W
)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
T
amb
=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Pulse Width (s) T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
(
°C
/W
)