Electrical characteristics – Diodes DXTP03200BP5 User Manual
Page 4
DXTP03200BP5
Document number: DS32068 Rev. 2 - 2
4 of 7
March 2010
© Diodes Incorporated
DXTP03200BP5
PowerDI is a registered trademark of Diodes Incorporated.
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max Unit
Test
Condition
Collector-Base Breakdown Voltage
V
(BR)CBO
-220 -245
−
V
I
C
= -100
μA
Collector-Emitter Breakdown Voltage (Note 7)
V
(BR)CEO
-200 -225
−
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7 -8.4
−
V
I
E
= -100
μA
Collector Cutoff Current
I
CBO
−
<1
−
-50
-0.5
nA
μA
V
CB
= -200V
V
CB
= -200V, T
A
= 100 °C
Emitter Cutoff Current
I
EBO
−
<1 -10 nA
V
EB
= -6V
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
−
−
−
−
-37
-130
-135
-180
-50
-155
-160
-275
mV
I
C
= -0.1A, I
B
= -10mA
I
C
= -0.5A, I
B
= -25mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -400mA
Base-Emitter Saturation Voltage (Note 7)
V
BE(sat)
−
-955 -1100 mV
I
C
= -2A, I
B
= -400mA
Base-Emitter Turn-On Voltage (Note 7)
V
BE(on)
−
-860 -1000 mV
V
CE
= -5V, I
C
= -2A
DC Current Gain (Note 7)
h
FE
100
100
20
−
195
170
50
5
−
300
−
−
−
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -1A
V
CE
= -5V, I
C
= -2A
V
CE
= -5V, I
C
= -5A
Transition Frequency
f
T
−
105
−
MHz
V
CE
= -10V, I
C
= -100mA,
f = 50MHz
Output Capacitance
C
obo
−
31
−
pF
V
CB
= -10V, f = 1MHz
Delay Time
t
d
−
21
−
ns
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
= -100mA
Rise Time
t
r
−
18
−
ns
Storage Time
t
s
−
680
−
ns
Fall Time
t
f
−
75
−
ns
Notes:
7. Pulse Test: Pulse width
≤300μs. Duty cycle ≤2.0%.