Electrical characteristics, Dxt5401 – Diodes DXT5401 User Manual
Page 2
DXT5401
Document number: DS31226 Rev. 3 - 2
2 of 5
March 2010
© Diodes Incorporated
DXT5401
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-160
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-150
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
⎯
V
I
E
= -10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
-50
nA
μA
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100
°C
Emitter Cutoff Current
I
EBO
⎯
-50 nA
V
EB
= -3.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
50
60
50
⎯
240
⎯
⎯
V
CE
= -5.0V, I
C
= -1.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -5.0V, I
C
= -50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.2
-0.5
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-1.0 V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
6.0 pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
40 200
⎯
V
CE
= -10V, I
C
= -1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100 300 MHz
V
CE
= -10V, I
C
= -10mA, f = 100MHz
Noise Figure
NF
⎯
8.0 dB
V
CE
= -5.0V, I
C
= -200
μA, R
S
= 10
Ω, f = 1.0kHz
Notes:
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.
0
0.2
0.4
25
50
75
100
125
150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 3)
A
0.6
0.8
1.0
0
0
1
2
3
4
5
6
7
8
9
10
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(mA
)
C
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0
50
100
150
200
250
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B