Electrical characteristics, Fzt653, A product line of diodes incorporated – Diodes FZT653 User Manual
Page 4
FZT653
Document Number DS33150 Rev. 4 - 2
4 of 7
November 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT653
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
120
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
100
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
< 1
100 nA
V
CB
= 100V
10 µA
V
CB
= 100V, T
A
= +125°C
Emitter Cut-off Current
I
EBO
< 1
100
nA
V
EB
= 5.6V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
0.13
0.3
V
I
C
= 1A, I
B
= 100mA
0.23 0.5
I
C
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
0.9
1.25 V
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
0.8 1.0 V I
C
= 1A, V
CE
= 2V
DC Current Gain (Note 10)
h
FE
70 200
I
C
= 50mA, V
CE
= 2V
100 200 300
I
C
= 500mA, V
CE
= 2V
55 110
I
C
= 1A, V
CE
= 2V
25 55
I
C
= 2A, V
CE
= 2V
Current Gain-Bandwidth Product (Note 10)
f
T
140 175
MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
Switching Times
t
on
80
ns
I
C
= 500mA, V
CC
= 10V,
I
B1
= -I
B2
= 50mA
t
off
1200 -
Output Capacitance (Note 10)
C
obo
30 pF
V
CB
= 10V, f = 1MHz
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%