Fcx591, Electrical characteristics, A product line of diodes incorporated – Diodes FCX591 User Manual
Page 4
FCX591
Da
tasheet Number: DS33061 Rev. 4 - 2
4 of 7
February 2014
© Diodes Incorporated
FCX591
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-80 — — V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 11)
BV
CEO
-60 — — V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.1 — V
I
E
= -100µA, I
C
= 0
Collector Cutoff Current
I
CBO
— <1 -100 nA
V
CB
= -60V
Emitter Cutoff Current
I
EBO
— <1 -100 nA
V
EB
= -5.6V, I
C
= 0
Emitter Cutoff Current
I
CES
— <1 -100 nA
V
CES
= -60V
DC current transfer Static ratio (Note 11)
h
FE
100
100
80
15
220
175
155
40
—
—
300
—
—
I
C
= -1mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 11)
V
CE(sat)
—
-155
-295
-300
-600
mV
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 11)
V
BE(sat)
— -965
-1200 mV
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-on Voltage (Note 11)
V
BE(on)
— -830
-1000 mV
I
C
= -1A, V
CE
= -5V
Transitional Frequency
f
T
150 — — MHz
I
E
= -50mA, V
CE
= -10V
f = 100MHz
Output capacitance
C
obo
— — 10 pF
V
CB
= -10V, f = 1MHz,
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.