Diodes FCX491 - Manual (Page 4)

FCX491
Document number: DS33054 Rev. 5 - 2
4 of 7
www.diodes.com
April 2014
© Diodes Incorporated
FCX491
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
80 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 11) BV
CEO
60 — — V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.1 — V I
E
= 100µA
Collector-Base Cutoff Current I
CBO
— <1 100 nA V
CB
= 60V
Collector Cutoff Current I
CES
— <1 100 nA V
CES
= 60V
Emitter Cutoff Current I
EBO
— <1 100 nA V
EB
= 5.6V
Collector-Emitter Saturation Voltage (Note 11) V
CE(sat)
—
—
100
160 250
500
mV
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage (Note 11) V
BE(sat)
— 965 1100 mV I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 11) V
BE(on)
— 830 1000 mV I
C
= 1A, V
CE
= 5V
DC Current Gain (Note 11) h
FE
100
100
80
30
140
150
120
40
300 —
I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 50V
I
C
= 2A, V
CE
= 5V
Transitional Frequency f
T
150 — — MHz
I
C
= 50mA, V
CE
= 10V
f=100MHz
Output capacitance C
obo
— — 10 pF V
CB
= 10V, f=1MHz
Turn-On Time t
on
—  49 —  ns
V
CC
= 10V,
I
CC
= 0.5A
I
B1
= - I
B2
= 25mA
Delay Time t
d
—  18 —  ns
Rise Time t
r
—  31 —  ns
Turn-Off Time t
off
—  476 —  ns
Storage Time t
s
—  414 —  ns
Fall Time t
f
—  62 —  ns
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%