Diodes DXT5616U - Manual (Page 2)

DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
2 of 7
www.diodes.com
March 2014
© Diodes Incorporated
DXT5616U
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5 V
Continuous Collector Current I
C
1
A
Peak Pulse Collector Current I
CM
2
Continuous Base Current I
B
100
mA
Peak Pulse Base Current I
BM
200
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
1.3
W
(Note 6) T
L
= + 25°C 20
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
96 °C/W 
Thermal Resistance, Junction to Lead (Note 6) R
θJL
6.25 °C/W 
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
ESD Ratings
(Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a through-hole device mounted on minimum recommended pad layout with 10mm lead length from the bottom of package to the board
that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.