Diodes DPLS160 - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V (BR)CBO
-80 ⎯ ⎯ V I C = -100
μA, I
E = 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-60 ⎯ ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 ⎯ ⎯ V I
E
= -100 μA, I
C
= 0
Collector Cutoff Current I CBO
⎯ ⎯
-100
-50
nA
μA V
CB
= -60V, I
E
= 0
V CB = -60V, I E = 0, T A = 150°C
Collector Cutoff Current I
CES
⎯ ⎯ -100 nA V
CE
= -60V, V
BE
= 0
Emitter Cutoff Current I
EBO
⎯ ⎯ -100 nA V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain h
FE
200
150
100 325
250
180
⎯
⎯
⎯
V
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -500mA
V
CE
= -5V, I
C
= -1A
Collector-Emitter Saturation Voltage V CE(SAT)
⎯
⎯
⎯
-90
-90
-160
-160
-175
-330
mV
I C = -100mA, I B = -1mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
Collector-Emitter Saturation Resistance R
CE(SAT)
⎯ 160 330 m Ω I
C
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -0.95 -1.1 V I
C
= -1A, I
B
= -50mA
Base-Emitter Turn On Voltage V
BE(ON)
⎯ -0.82 -0.9 V V
CE
= -5V, I
C
= -1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C obo
⎯ 10 15 pF V CB = -10V, f = 1.0MHz
Current Gain-Bandwidth Product f
T
150 220 ⎯ MHz V
CE
= -10V, I
C
= -50mA, f = 100MHz
NEW PRODUCT
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
350
400
0
0
0.3
0.6
0.9
1.2
1.5
0 1 2 3 4
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-I
,
5
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B
DS31389 Rev. 4 - 2 2 of 4
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DPLS160
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