Diodes FMMT489 - Manual (Page 4)

FMMT489
Document number: DS33090 Rev. 4 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
FMMT489
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 V I
C
= 100 µA
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
30 V I
C
= 10 mA
Emitter-Base Breakdown Voltage BV
EBO
7 V I
E
= 100 µA
Collector-Base Cutoff Current I
CBO
100 nA V
CB
= 30V
Emitter-Base Cutoff Current I EBO
100 nA V EB = 6V
Collector-Emitter Cutoff Current I
CES
100 nA V
CES
= 30V
Static Forward Current Transfer Ratio (Note 8) h
FE
100
100
60
20
-
300
-
-
I C = 1mA, V CE = 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I C = 4A, V CE = 2V
Collector-Emitter Saturation Voltage
(Note 8)
V
CE(sat)
300
600 mV
mV I
C
= 1A, I
B
= 100mA
I
C
= 2A, I
B
= 200mA
Base-Emitter Turn-On Voltage (Note 8) V
BE(on)
1.0 V I
C
= 1A, V
CE
= 2V
Base-Emitter Saturation Voltage (Note 8) V BE(sat)
1.1 V I C = 1A, I B = 100mA
Output Capacitance C
obo
10 pF V
CB
= 10V, f = 1MHz
Transition Frequency f
T
150 MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%