Diodes DZT2222A - Manual (Page 2)

DS30481 Rev. 5 - 2 2 of 4
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DZT2222A
© Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
75 ⎯ V I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 ⎯ V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage V (BR)EBO
6 ⎯ V I E = 10
μA, I
C = 0
⎯ 10 nA V
CB
= 50V, I
E
= 0
Collector Cut-Off Current I
CBO ⎯ 10
μA V
CB
= 50V, I
E
= 0, T
A
= 150 °C
Emitter Cut-Off Current I EBO
⎯ 10 nA V EB = 3V, I C = 0
Collector-Emitter Cut-Off Current I
CEX
⎯ 10 nA V
CE
= 60V, V
EB(off)
= 3V
ON CHARACTERISTICS (Note 4)
⎯ 0.3 V I C = 150mA, I B = 15mA
Collector-Emitter Saturation Voltage V CE(SAT) ⎯ 1.0 V I
C
= 500mA, I
B
= 50mA
0.6 1.2 V I
C
= 150mA, I
B
= 15mA
Base-Emitter Saturation Voltage V
BE(SAT) ⎯ 2.0 V I
C
= 500mA, I
B
= 50mA
35 ⎯
I
C
= 0.1mA, V
CE
= 10V
50 ⎯
I
C
= 1mA, V
CE
= 10V
75 ⎯ I
C
= 10mA, V
CE
= 10V
35 ⎯
I C = 10mA, V CE = 10V, T A = -55
°C
100 300 I
C
= 150mA, V
CE
= 10V
50 ⎯ I
C
= 150mA, V
CE
= 1V
DC Current Gain h
FE
40 ⎯
V
I C = 500mA, V CE = 10V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
300 ⎯ MHz I
C
= 20mA, V
CE
= 20V, f = 100MHz
Output Capacitance C
obo
⎯ 8 pF V
CB
= 10V, I
E
= 0, f = 1MHz
Input Capacitance C
ibo
⎯ 25 pF V
EB
= 0.5V, I
C
= 0, f = 1MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯ 10 ns
Rise Time t
r
⎯
25 ns
V
CE
= 30V, V
EB(off)
= 0.5V, I
C
= 150mA, I
B1
= 15mA
Storage Time t
s
⎯ 225 ns
Fall Time t
f
⎯ 60 ns
V CE = 30V, I C = 150mA, I B1 = I B2
= 15mA
NEW PROD
UC
T
Notes:
4. Measured under pulsed conditions. Pulse width = 300 μS. Duty Cycle, d< = 2%.
R = 125°C/W θJA
V , COLLECTOR EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C