Electrical characteristics, Dst847bdj – Diodes DST847BDJ User Manual
Page 3
DST847BDJ
Document number: DS32035 Rev. 1 - 2
3 of 5
January 2010
© Diodes Incorporated
DST847BDJ
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic (Note 4)
Symbol
Min
Typical
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V
(BR)CBO
50
150
V
I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CES
50
150
V
I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
45
65
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6
8.35
V
I
E
= 1
μA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
15
nA
V
CB
= 30V
DC Current Gain
h
FE
100
200
220
300
470
I
C
= 10
μA, V
CE
= 5V
I
C
= 2.0mA, V
CE
= 5V
Collector-Emitter Saturation Voltage
V
CE(sat)
50
122
125
300
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
760
880
1000
1100
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage
V
BE(on)
580
650
725
750
800
mV
I
C
= 2.0mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
Current Gain-Bandwidth Product
f
T
100
170
MHz
V
CE
= 5V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
cbo
1.5
pF
V
CB
= 10V, f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
0
1
2
3
4
5
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C
I = 2mA
B
I = 0.2mA
B
I = 0.4mA
B
I = 0.6mA
B
I = 0.8mA
B
I = 1.6mA
B
I = 1.4mA
B
I = 1.2mA
B
I = 1.8mA
B
I = 1mA
B
1
10
100
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
300
350
400
450
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = -55°C
A
T = 25°C
A
T = 100°C
A
T = 150°C
A
V
= 5V
CE