Diodes DSS5240T - Manual (Page 2)

DSS5240T
Document number: DS31591 Rev. 4 - 2
2 of 7
www.diodes.com
May 2014
© Diodes Incorporated
DSS5240T
NEW PROD
UC
T
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Collector Current I
CM
-3 A
Continuous Collector Current I
C
-2 A
Base Current I
B
-300 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
730 mW
Power Dissipation (Note 7) P
D
600 mW
Thermal Resistance, Junction to Ambient Air (Note 6) R
θJA
171 °C/W
Thermal Resistance, Junction to Ambient Air (Note 7) R
θJA
209 °C/W
Thermal Resistance, Junction to Lead (Note 8) R
θJL
75 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on minimum recommended pad layout.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.