Electrical characteristics, Dss3540m – Diodes DSS3540M User Manual
Page 3
DSS3540M
Document number: DS31821 Rev. 2 - 2
3 of 5
January 2011
© Diodes Incorporated
DSS3540M
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-40
⎯
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
BV
CEO
-40
⎯
⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
⎯
⎯
V
I
E
= -100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
-100
-50
nA
μA
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 150°C
Emitter Cutoff Current
I
EBO
⎯
⎯
-100 nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
200
150
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -500mA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-50
-130
-200
-350
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -200mA, I
B
= -10mA
I
C
= -500mA, I
B
= -50mA
Collector-Emitter Saturation Resistance
R
CE(sat)
⎯
⎯
700 m
Ω
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
⎯
-1.2 V
I
C
= -500mA, I
B
= -50mA
Base-Emitter Turn On Voltage
V
BE(on)
⎯
⎯
-1.1 V
V
CE
= -2V, I
C
= -100mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
⎯
10 pF
V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
100
⎯
⎯
MHz
V
CE
= -5V, I
C
= -100mA, f = 100MHz
Notes:
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
-V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
-I
,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
0
100
200
300
400
500
600
700
800
0.1
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A