Diodes FCX688B - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
12 V I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
12 V I
C
=10mA*
Emitter-Base
Breakdown Voltage V
(BR)EBO
5 V I
E
=100
µ
A
Collector Cut-Off Current I
CBO
0.1
µ
A V
CB
=9V
Emitter Cut-Off Current I
EBO
0.1
µ
A V
EB
=4V
Collector-Emitter
Saturation Voltage V
CE(sat)
40
60
180
350
400 mV
mV
mV
mV
mV I
C
=0.1A, I
B
=1mA *
I
C
=0.1A, I
B
=0.5mA *
I
C
=1A, I
B
=10mA *
I
C
=3A, I
B
=10mA *
I
C
=4A, I
B
=50mA *
Base-Emitter
Saturation Voltage V
BE(sat)
1.1 V
I
C
=3A, I
B
=20mA *
Base-Emitter
Turn-On Voltage V
BE(on)
1.0 V IC=3A, V
CE
=2V *
Static Forward Current
Transfer
Ratio h
FE
500
400
100 I
C
=100mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance C
ibo
200 pF V
EB
=0.5V, f=1MHz
Output Capacitance C
obo
40 pF V
CB
=10V, f=1MHz
Switching Times t
on
t
off
40
500 ns
ns I
C
=500mA, I
B1
=I
B2
=50mA
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FCX688B