Diodes FCX688B User Manual
Fcx688b, Sot89 npn silicon power (switching) transistor, Cb c e
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SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage
Complimentary Type -
FCX789A
Partmarking Detail -
688
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
12
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
10
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25°C
P
tot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
†
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX688B