Electrical characteristics, New product – Diodes DNLS320E User Manual
Page 2

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Off Characteristics
Collector-Base Breakdown Voltage
V
(BR)CBO
20
⎯
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
20
⎯
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
⎯
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
100 nA
V
CB
= 16V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
⎯
100 nA
V
EB
= 4V, I
C
= 0
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
⎯
0.04
0.18
0.24
0.10
0.50
0.45
V
I
C
= 0.1A, I
B
= 0.5mA
I
C
= 2A, I
B
= 10mA
I
C
= 3A, I
B
= 20mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
0.9 V
I
C
= 1A, I
B
= 10mA
Base-Emitter Turn-On Voltage
V
BE(ON)
⎯
⎯
0.9 V
V
CE
= 2V, I
C
= 1A
DC Current Gain
h
FE
500
400
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 6A
AC Characteristics
Transition Frequency
f
T
150
⎯
⎯
MHz V
CE
= 5V, I
C
= 50mA, f = 50MHz
Input Capacitance
C
ibo
⎯
230
⎯
pF
V
EB
= 0.5V, f = 1MHz
Output Capacitance
C
obo
⎯
23
⎯
pF
V
CB
= 10V, f = 1MHz
Switching Times
t
on
t
off
⎯
⎯
26
220
⎯
⎯
ns
ns
V
CC
= 10V, I
C
= 500mA
I
B1
= -I
B2
= 50mA
NEW PRODUCT
Notes:
4. Pulse Test: Pulse width
≤300μs. Duty cycle ≤2.0%.
0
0.2
0.4
25
50
75
100
125
150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
0.6
0.8
1.0
0
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A
)
C
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
0
1
2
3
4
5
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
DS31326 Rev. 3 - 2
2 of 4
www.diodes.com
DNLS320E
© Diodes Incorporated