Diodes DNLS320E - Manual

DNLS320E DNLS320E
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
•
Low Collector-Emitter Saturation Resistance R
CE(SAT)
= 80m
Ω at 3A
•
High DC Current Gain h FE > 400 at I C = 2A
• Complementary PNP Type Available (DPLS325E)
• Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
• Weight: 0.112 grams (approximate)
2
3
4
1
SOT-223
DS31326 Rev. 3 - 2 1 of 4
www.diodes.com
DNLS320E
© Diodes Incorporated
N
E
W
P P
RR
O
D
U
C
T T
E
W
O
D
U
C
2,4
3
1
COLLECTOR
EMITTER
BASE 4
3
2
1
C C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
20 V
Collector-Emitter Voltage V CEO
20 V
Emitter-Base Voltage V
EBO
5 V
Continuous Collector Current I
C
3 A
Peak Pulse Current I
CM
8 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @T
A
= 25°C (Note 3) P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C R θJA 125 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
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