Diodes MBR2150 - Manual (Page 3)

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150
Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
3
Absolute Maximum Ratings (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
<
1/ θ
JA
.
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
DO-214AC
θ
JL
Junction to Lead
DO-15
23
DO-214AC 90
Maximum 1 Thermal
Resistance
θ
JA
Junction 1 to 1 Ambient
DO-15 80
°C/W
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage V
RRM
Working Peak Reverse Voltage V
RWM
DC Blocking Voltage V
R
150 V
Average Rectified Forward Current (Rated V
R
, T
C
=TBD) I
F(AV)
2 A
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)
I
FSM
75 A
Operating Junction Temperature Range (Note 2) T
J
-65 to 150 °C
Storage Temperature Range T
STG
-65 to 150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10000 V/ µs
ESD (Machine Model=C) 400 V
ESD (Human Body Model=3B) 8000 V