Diodes MBR5H150 - Manual (Page 3)

Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150
Aug. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
3
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
<
1/ θ
JA
.
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
θ
JC
Junction to Case TBD
Maximum Thermal Resistance
θ
JA
Junction to
Ambient
TBD
°C/W
Electrical Characteristics
Parameter Symbol Conditions Value Units
Maximum Instantaneous Forward
Voltage Drop (Note 3)
V
F
I
F
=5A, T
C
=25 °C 0.92 V
Rated DC Voltage,
T
C
=25 °C
8.0 µA Maximum Instantaneous Reverse
Current (Note 3)
I
R
Rated DC Voltage,
T
C
=150 °C
50.0 mA
Note 3: Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤2.0%.
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
150 V
Average Rectified Forward Current
(Rated V
R
) T
C
= 150 °C
I
F(AV)
5 A
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz)
I
FSM
125 A
Operating Junction Temperature Range（Note 2） T
J
175 °C
Storage Temperature Range T
STG
-55 to 175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10000 V/ µs
ESD Ratings: Machine Model = C
Human Body Model =3B > 400
> 8000
V