Single buffer gate with 3-state output, New prod uc t electrical characteristics – Diodes 74AHC1G125 User Manual
Page 4
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
74AHC1G125
Document number: DS35176 Rev. 1 - 2
4 of 9
March 2011
© Diodes Incorporated
NEW PROD
UC
T
Electrical Characteristics
Symbol
Parameter
Test Conditions
V
CC
25ºC
-40ºC to 85ºC
-40ºC to 125ºC
Unit
Min
Typ.
Max
Min
Max
Min
Max
V
OH
High Level
Output Voltage
I
OH
= -50
μA
2V 1.9
2 1.9 1.9
V
3V 2.9
3 2.9 2.9
4.5V 4.4
4.5 4.4 4.4
I
OH
= -4mA
3V 2.58
2.48 2.40
I
OH
= -8mA
4.5V 3.94 3.8
3.70
V
OL
Low Level
Output Voltage
I
OL
= 50
μA
2V
0.1
0.1
0.1
V
3V
0.1
0.1
0.1
4.5V
0.1 0.1 0.1
I
OL
= 4mA
3V
0.36
0.44
0.55
I
OL
= 8mA
4.5V
0.36
0.44
0.55
I
I
Input Current
V
I
= 5.5V or GND
0 to 5.5V
± 0.1
± 1
± 2
μA
I
OZ
Z State
Leakage
Current
V
O
=0 to 5.5V
5.5V
0.25
2.5 10
μA
I
CC
Supply Current
V
I
= 5.5V or GND
I
O
=0
5.5V 1 10
40
μA
C
i
Input
Capacitance
V
I
= V
CC
– or
GND
5.5V
2.0
10 10
10 pF
θ
JA
Thermal
Resistance
Junction-to-
Ambient
SOT25
(Note 4)
195
o
C/W
SOT353
430
θ
JC
Thermal
Resistance
Junction-to-
Case
SOT25
(Note 4)
58
o
C/W
SOT353
155
Note: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.