Diodes 74HCU04 - Manual (Page 4)

74HCU04
Document number: DS35328 Rev. 3 - 2
4 of 9
www.diodes.com
January 2013
© Diodes Incorporated
74HCU04
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions V
CC
T
A
= -40°C to +85°C T
A
= -40°C to +125°C
Unit
Min Max Min Max
V
IH
High-level Input
Voltage
2.0V 1.7 1.7
V 4.5V 3.6 3.6
6.0V 4.8 4.8
V
IL
Low-level Input
Voltage
2.0V 0.3 0.3
V 4.5V 0.9 0.9
6.0V 1.2 1.2
V
OH
High-level Output
Voltage
I
OH
= -20μA 2.0V 1.8 1.9
V
I
OH
= -20μA 4.5V 4.0 4.4
I
OH
= -20μA 6.0V 5.5 5.5
I
OH
= -4.0mA 4.5V 3.84 3.7
I
OH
= -5.2mA 6.0V 5.34 5.2
V
OL
Low-level Output
Voltage
I
OL
= 20μA 2.0V 0.2 0.2
V
I
OL
= 20μA 4.5V 0.5 0.5
I
OL
= 20μA 6.0V 0.1 0.1
I
OL
= 4mA 4.5V 0.33 0.40
I
OL
= 5.2mA 6.0V 0.33 0.40
I
I
Input Current V
I
= GND to 5.5V 6.0V ± 1 ± 1 μA
I
CC
Supply Current V
I
= GND or V
CC
, I
O
= 0 6.0V 20 40 μA
Switching Characteristics
Symbol Parameter
Test
Conditions
V
CC
T
A
= +25°C -40°C to +85°C -40°C to +125°C
Unit
Min Typ Max Max Max
t
PD
Propagation
Delay A
N
to Y
N
Figure 1
C
L
= 50pF
2.0V — 19 70 90 105
ns 4.5V — 7 14 18 21
6.0V — 5 12 15 18
t
t
Transition Time
Figure 1
C
L
= 50pF
2.0V — 19 75 95 110
ns 4.5V — 7 15 19 22
6.0V — 6 13 16 19
Operating Characteristics (@T
A
= +25°C, unless otherwise specified.)
Parameter Test Conditions
V
CC
= 6V
Unit
Typ
C
pd
Power Dissipation
Capacitance per Gate
f = 1MHz 10 pF
C
I
Input Capacitance V
I
= V
CC
– or GND 4 pF