Diodes AZ4558C - Manual (Page 4)

4
Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C
Electrical Characteristics
Operating Conditions: V
CC
= + 15V, V
EE
=-15V, T
A
=25 o C, unless otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Input Offset Voltage V
IO
1 5 mV
Input Offset Current I
IO
V
CM
=0V 10 100 nA
Input Bias Current I
IB
V
CM
=0V 70 400 nA
Large Signal Voltage Gain A
VD
R
L
= 2KΩ, V
O
= ±10V 85 100 dB
Supply Voltage Rejection Ratio SVR R
S
≤10KΩ 80 100 dB
Supply Current I
CC
All Amplifiers, No Load 2.5 4.5 mA
Input Common Mode Voltage
Range
V
ICM
±12 V
Common Mode Rejection Ratio CMRR R
S
≤10KΩ 70 95 dB
Output Voltage Swing V
O
R
L
≥10KΩ ±12 ±14
V
R
L
≥2KΩ ±10 ±13
Slew Rate SR
V
I
= ±10V, R
L
=2K Ω, C
L
=100pF, unity
gain
1.8 V/ μs
Rise Time T
R
V
I
= ±20mV, R
L
=2K Ω, C
L
=100pF, unity
gain
0.3 μs
Overshoot K
OV
V
I
= ±20mV, R
L
=2K Ω, C
L
=100pF, unity
gain
15 %
Input Resistance R
I
0.5 M Ω
Output Resistance R
O
45 Ω
Unity Gain Bandwidth B Gain=0dB 2.8 MHz
Gain Bandwidth Product GBWP
V
I
= ±10mV, R
L
=2K Ω,
C
L
=100pF, f=10KHz
5.5 MHz
Total Harmonic Distortion Plus
Noise
THD+N
f=1KHz, A
V
=6dB, R
L
=10K Ω,
V
O
=1V
RMS
,
0.002 %
Equivalent Input Noise Voltage
Density
e
N
R
S
=100 Ω, f=1KHz 10
Output Current
I
SINK
V-=1V, V+= 0V, V
O
=2V 60
mA
I
SOURCE
V+=1V, V-= 0V, V
O
=2V 35
Thermal Resistance
(Junction to Case)
θ
JC
DIP-8 55
o C/W
SOIC-8 81
nV
Hz
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