Diodes AH276 - Manual (Page 5)

5
Nov. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH AH276
Parameter Symbol Test Condition Min Typ Max Unit
Output Saturation Voltage V
SAT
V
CC
=3.5V, I
O
=100mA 0.3 V
I
O
=350mA 0.35 0.6 V
Output Leakage Current I
OL
V
CE
=16V 0.1 10 µA
Supply Current I
CC
V
CC
=16V, Output Open 12 16 mA
Output Rise Time tr R
L
=820 Ω, C
L
=20pF 3.0 10 µs
Output Fall Time tf R
L
=820 Ω, C
L
=20pF 0.3 1.5 µs
Switch Time Differential ∆t R
L
=820 Ω, C
L
=20pF 3.0 10 µs
Output Zener Breakdown Voltage V
Z
55 V
Thermal Protection Temperature TSD 178 o
C
Thermal Protection Hysteresis ∆TSD 40 o C
(T
A
=25 o C, V
CC
=14V, unless otherwise specified)
Electrical Characteristics
Parameter Symbol Grade Min Typ Max Unit
Operating Point B
OP
A 10 50 Gauss
B 5 70 Gauss
C 100 Gauss
Releasing Point B
RP
A -50 -10 Gauss
B -70 -5 Gauss
C -100 Gauss
Hysteresis B
HYS
75 Gauss
Magnetic Characteristics
(T
A
=25 o C)
V
DO
(V)
High
Low
B
HYS
V
SAT
0
S N
B
RP
B
OP
Off-state
On-state
Turn off Turn on
Magnetic Flux Density (Gauss)