Complementary output hall effect latch ah276, Data sheet – Diodes AH276 User Manual
Page 4
COMPLEMENTARY OUTPUT HALL EFFECT LATCH AH276
4
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
Data Sheet
Parameter Symbol
Value
Unit
Supply Voltage
V
CC
20
V
Reverse Protection Voltage
V
RCC
-20 V
Magnetic Flux Density
B
Unlimited
Gauss
Output Current
Continuous
I
O
350
mA
Hold
550
mA
Peak (start up)
750
mA
Power Dissipation
P
D
550
mW
Thermal Resistance
Die to atmosphere
θJA
227
o
C/W
Die to package case
θJC
49
o
C/W
Storage Temperature
T
STG
-50 to 150
o
C
ESD (Machine Model)
300
V
ESD (Human Body Model)
2500
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
3.5
16
V
Ambient Temperature
T
A
-20
85
o
C
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
(T
A
=25
o
C)
(T
A
=25
o
C)