Two phase hall effect latch with fg output ah211, Data sheet – Diodes AH211 User Manual
Page 4
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
4
Feb. 2010 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
Data Sheet
Parameter Symbol
Value
Unit
Supply Voltage
V
CC
20
V
Magnetic Flux Density
B
Unlimited
Gauss
Output Current
Continuous
I
O
400
mA
Hold
600
mA
Peak (Start up)
800
mA
FG Voltage
V
FG
30
V
FG Current
I
FG
20
mA
Power Dissipation
P
D
550
mW
Thermal Resistance
Die to Atmosphere
θ
JA
227
o
C/W
Die to Package Case
θ
JC
49
o
C/W
Storage Temperature
T
STG
-50 to 150
o
C
ESD (Machine Model)
600
V
ESD (Human Body Model)
6000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
3.5
16
V
Ambient Temperature
T
A
-20
85
o
C
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
(T
A
=25
o
C)
(T
A
=25
o
C)