Diodes AP7215 - Manual (Page 4)

AP7215
600mA CMOS LDO
AP7215 Rev. 1 4 of 11 FEBRUARY 2009
www.diodes.com © Diodes Incorporated
Electrical Characteristics
(T
A
= 25
°C, C
IN
= 1µF, C
OUT
= 1µF, V
IN
=5.0V, V
EN
= V
IN
, unless otherwise noted)
Symbol Parameter Test Conditions Min Typ. Max Unit
I
CCQ
Quiescent Current I
OUT
= 0mA - 50 80 μA
I
STBY
Standby Current
V
EN
= GND
V
IN
= 5.0V
15 30 μA
VR
OUT
Output Voltage
Accuracy
I
OUT
= 30mA, V
IN
= 5V 3.234 3.300 3.366 V
ΔVR
OUT
/
ΔT
A
/VR
OUT
VR
OUT
Temperature
Coefficient
T
A
=-40
°C to 85°C, I
OUT
= 30mA ±100 ppm /
o
C
V
DO
Dropout Voltage
I
OUT
= 30mA 60 100 mV
I
OUT
= 100mA 100 250 mV
I
OUT
Maximum Output
Current
V
IN
= 5.3V 600 mA
I
LIMIT
Current Limit V
IN
= 5.3V 750 mA
I
SHORT
Short Circuit Current V
IN
= 5.3V 50 mA
ΔVR
OUT
/
ΔV
IN
/VR
OU
T
Line Regulation 4.3V ≤ V
IN
≤ 5.5V, I
OUT
= 30mA 0.01 ±0.2 %/V
ΔVR
OUT
Load Regulation 1mA ≤ I
OUT
≤ 100mA, V
IN
= 5.3V 15 50 mV
PSRR
Power Supply
Rejection V
IN
= 4.3V+ 0.5Vp-pAC,
I
OUT
= 50mA
F= 1KHz 55 dB
V
EH EN Input Threshold
Output ON 1.6 V
V
EL
Output OFF 0.25 V
I
EN
Enable Pin Current -0.1 0.1 μA
V
DF
V
IN
Detection Voltage Detect VD
OUT
fall 3.83 3.91 3.98 V
V
HYS
V
DF
Hysteresis
Range
V
DF
x1.02
V
DF
x1.05
V
DF
x1.08
V
I VD
OUT
VD
OUT
Sink Current
VD
OUT
= 0.5V, V
IN
= 2.0V
20 mA
VD
OUT
= 0.5V, V
IN
= 3.0V 30
t
RP
VD
OUT
Delay Time 10 20 40 ms
θ
JA
Thermal Resistance
Junction-to-Ambient
SOP-8L (Note 3) 124
ºC/W
SOT89-3L (Note 3) 173
θ
JC
Thermal Resistance
Junction-to-Case
SOP-8L (Note 3) 25
ºC/W
SOT89-3L (Note 3) 42
Notes: 3. Test conditions for SOP-8L, SOT89-3L: Device mounted on FR-4 substrate, single sided PC board, 2oz copper, with minimum recommended
pad layout.