Diodes AP2138/2139 - Manual (Page 19)

19
Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139
Typical Performance Characteristics (Continued)
Figure 12. Dropout Voltage vs. Output Current Figure 13. Dropout Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 200 225 250
0
50
100
150
200
250
300
350
400
450
500
550
600
AP2138-3.3
Dr
opo
ut Vol
tage
(
mV)
Output Current (mA)
T
J
=-40 o C
T
J
=25 o C
T
J
=85 o C
-40 -20 0 20 40 60 80
0
50
100
150
200
250
300
350
400
450
500
550
I
OUT
=250mA
I
OUT
=200mA
I
OUT
=150mA
I
OUT
=100mA
AP2138-3.3
D
rop
ou
t V
o
ltag
e
(m
V
)
Junction Temperature ( o C)
I
OUT
=10mA
Figure 14. Line transient (V
IN
=4.3 to 5.3V, I
OUT
=10mA ) Figure 15. Load transient (V
IN
=4.3V, I
OUT
=1mA to150mA)
V
IN
500mV
V
OUT
200mV/div
V
OUT
1V/div
I
OUT
50mA/div
Time 100 μs/div Time 2ms/div