Diodes AP2125 - Manual (Page 19)

19
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125
Data Sheet
Figure 28. Line Transient
Figure 30. Load Transient
(Conditions: I
OUT
=30mA, C
OUT
=1 μF, V
IN
=2.8 to 3.8V)
Δ
V
OUT
(0
.0
2
V
/D
iv
)
V
IN
(1
V
/D
iv
)
AP2125-1.8
0
2.8
3.8
0.02
-0.02
4.8
(Conditions: I
OUT
=10 to 100mA, C
IN
=1 μF,
V
OUT
(0
.02
V/
D
iv)
I OUT
(5
0
m
A/D
iv)
Time (40 μs/Div)
AP2125-1.8
0
100
1.82
1.8
1.84
50
Time (40 μs/Div)
C
OUT
=1 μF, V
IN
=2.8 V)
Typical Performance Characteristics (Continued)
Figure 31. Load Transient
(Conditions: I
OUT
=10 to 100mA, C
IN
=1 μF,
C
OUT
=1 μF, V
IN
=4.3 V)
V
OU
T
(
0.0
2V
/D
iv
)
I OUT
(50m
A/
Div)
Time (40 μs/Div)
AP2125-3.3
0
100
3.32
3.3
3.34
50
Figure 29. Line Transient
AP2125-3.3
(Conditions: I
OUT
=30mA, C
OUT
=1 μF, V
IN
=4 to 5V)
Δ
V
OUT
(0
.0
5V
/D
iv
)
V
IN
(0
.5V
/D
iv)
0
4
4.5
0.05
-0.05
5
Time (100 μs/Div)