Diodes AP2121 - Manual (Page 17)

17
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Data Sheet
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage V
OUT
V
IN
=4.3V
1mA ≤I
OUT
≤30mA
3.234 3.3 3.366 V
Input Voltage V
IN
6 V
Output Current I
OUT
V
IN
-V
OUT
=1V 200 mA
Load Regulation V
RLOAD
V
IN
=4.3V
1mA ≤ I
OUT
≤ 80mA
12 40 mV
Line Regulation V
RLINE
3.8V ≤V
IN
≤6V
I
OUT
=30mA
4 16 mV
Dropout Voltage V
DROP
I
OUT
=10mA 20 40
mV
I
OUT
=100mA 150 300
I
OUT
=150mA 200 400
I
OUT
=200mA 250 500
Quiescent Current I
Q
V
IN
=4.3V, I
OUT
=0mA 25 50 μ A
Standby Current I
STD
V
IN
=4.3V
V
CE
in OFF mode
0.1 1 μ A
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
V
IN
=4.3V
70 dB
Output Voltage
Temperature Coefficient
ΔV
OUT
/ ΔT
I
OUT
=30mA
±
330 μV/ o C
(ΔV
OUT
/V
OUT
)/ ΔT ±
100 ppm/ o C
Short Current Limit I
LIMIT
V
OUT
=0V 50 mA
RMS Output Noise V
NOISE
T
A
=25 o C
10Hz ≤f≤100kHz
30 μ Vrms
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance R
PD
2.5 5 10 M Ω
Thermal Resistance
(Junction to Case)
θ
JC
SOT-23-3 74
o C/W SOT-23-5 74
CSP-4 5
(V
IN
=4.3V, T
J
=25 o C, C
IN
=1 μF, C
OUT
=1 μF, Bold typeface applies over -40 o C ≤T
J
≤85 o C, unless otherwise specified.)
AP2121-3.3 Electrical Characteristics
Electrical Characteristics (Continued)