Diodes AP2115 - Manual (Page 9)

Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
9
Electrical Characteristics (Continued)
AP2115-3.3 Electrical Characteristics (Note 2)
V
IN
=4.3V, C
IN
=4.7 µF (Ceramic), C
OUT
=4.7 µF (Ceramic), Typical T
A
=25°C, Bold typeface applies over -40 O C≤T
J
≤85 O C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
OUT
V
IN
=4.3V, 1mA ≤ I
OUT
≤ 30mA
98.5%
×V
OUT
3.3 101.5%
×V
OUT
V
Maximum Output Current I
OUT(MAX)
V
IN
=4.3V, V
OUT
=3.25V to 3.35V 1 A
Load Regulation
△ V
OUT
/V
OUT
I △
OUT
V
IN
=4.3V, 1mA ≤ I
OUT
≤1A 0.2 1 %/A
Line Regulation
△ V
OUT
/V
OUT
V △
IN
4.3V≤V
IN
≤6V, I
OUT
=30mA -0.1 0.02 0.1 %/V
Dropout Voltage V
DROP
I
OUT
=1A 450 750 mV
Quiescent Current I
Q
V
IN
=4.3V, I
OUT
=0mA 65 90 µA
f=100Hz 65 Power Supply Rejection
Ratio
PSRR
Ripple 1Vp-p
V
IN
=4.3V,
I
OUT
=100mA f=1KHz 65
dB
Output Voltage
Temperature Coefficient △ V
OUT
/V
OUT
△ T
I
OUT
=30mA ±30 ppm/°C
Short Current Limit I
SHORT
V
OUT
=0V 50 mA
RMS Output Noise V
NOISE
10Hz ≤ f ≤100kHz (No load) 30 µV
RMS
V
EN
High Voltage V
IH
Enable logic high, regulator on 1.5
V
EN
Low Voltage V
IL
Enable logic low, regulator off 0.4
V
Standby Current I
STD
V
IN
=3.5V, V
EN
in OFF mode 0.01 1.0 µA
Start-up Time t
S
No Load 20 µs
EN Pull Down Resistor
R
PD
3.0 M Ω
V
OUT
Discharge Resistor
R
DCHG
Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature
T
OTSD
160
Thermal Shutdown
Hysteresis
T
HYOTSD
25
°C
SOIC-8 74.6
Thermal Resistance θ
JC
SOT-89-5 47
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
A
=25 °C . Over temperature specifications guaranteed by design only.