Electrical characteristics – Diodes AP2181D/AP2191D User Manual
Page 4
AP2181D/AP2191D
Document number: DS32251 Rev. 3 - 2
4 of 18
March 2013
© Diodes Incorporated
AP2181D/AP2191D
Electrical Characteristics
(@T
A
= +25°C, V
IN
= +5.0V, unless otherwise specified.)
Symbol Parameter
Test
Conditions
Min
Typ
Max
Unit
V
UVLO
Input UVLO
1.6
1.9
2.5
V
I
SHDN
Input Shutdown Current
Disabled, I
OUT
= 0
0.5 1
µA
I
Q
Input Quiescent Current
Enabled, I
OUT
= 0
45
70
µA
I
LEAK
Input Leakage Current
Disabled, OUT grounded
0.1
1
µA
I
REV
Reverse Leakage Current
Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.1 1
µA
R
DS(ON)
Switch on-resistance
V
IN
= 5V,
I
OUT
= 1.5A
T
A
= +25°C
SOT25, MSOP-8, SO-8,
MSOP-8-EP
95
115
m
Ω
U-DFN2018-6
90
110
-40°C
≤ T
A
≤ +85°C
140
V
IN
= 3.3V,
I
OUT
= 1.5A
T
A
= +25°C
120
140
-40°C
≤ T
A
≤ +85°C
170
I
SHORT
Short-Circuit Current Limit
Enabled into short circuit, C
L
=120µF
2.0 A
I
LIMIT
Over-Load Current Limit
V
IN
= 5V, V
OUT
= 4V, C
L
= 120µF, -40°C
≤ T
A
≤ +85°C
1.6 2.1 2.6 A
I
Trig
Current Limiting Trigger Threshold
Output Current Slew rate (<100A/s) , C
L
= 120µF
2.6 A
V
IL
EN Input Logic Low Voltage
V
IN
= 2.7V to 5.5V
0.8
V
V
IH
EN Input Logic High Voltage
V
IN
= 2.7V to 5.5V
2 V
I
SINK
EN Input leakage
V
EN
= 5V
1
µA
T
D(ON)
Output Turn-On Delay Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05 ms
T
R
Output Turn-On Rise Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.6
1.5
ms
T
D(OFF)
Output Turn-Off Delay Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05 ms
T
F
Output Turn-Off Fall Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05
0.1
ms
R
FLG
FLG Output FET On-Resistance
I
FLG
=10mA
20
40
Ω
T
Blank
FLG Blanking Time
C
IN
= 10uF, C
L
= 22F
4 7 15
ms
T
DIS
Discharge Time
C
L
= µF, V
IN
= 5V, disabled to V
OUT
< 0.5V
0.6
ms
R
DIS
Discharge Resistance (Note 5)
V
IN
= 5V, disabled, I
OUT
= 1mA
100
Ω
T
SHDN
Thermal Shutdown Threshold
Enabled, R
LOAD
= 1k
Ω
140
C
T
HYS
Thermal Shutdown Hysteresis
25
C
θ
JA
Thermal Resistance Junction-to-
Ambient
SOT25 (Note 6)
170
o
C/W
SO-8 (Note 6)
127
MSOP-8 (Note 6)
118
MSOP-8-EP (Note 7)
67
U-DFN2018-6 (Note 7)
70
Notes:
5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
7. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.