Diodes CTA2P1N - Manual (Page 4)

DS30296 Rev. 9 - 2 4 of 5
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CTA2P1N
© Diodes Incorporated
MMBT4403 Section
(Continued)
0
50
100
25 50 75 100 125 150 175 200
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Max Power Dissipation vs.
Ambient Temperature (Total Device)
A
150
200
0
NEW PROD
UC
T
2N7002 Section
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
I,
D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 8 On-Region Characteristics (2N7002)
DS
V = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
GS
5.5V
5.0V
0
1
2
3
4
5
0 0.2
I , DRAIN CURRENT (A)
Fig. 9 On-Resistance vs. Drain Current (2N7002)
D
V = 5.0V
GS
T = 25 C
j
°
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERATURE ( C)
Fig. 10 On-Resistance vs. Junction Temperature (2N7002)
j
°
V = 10V,
I = 200mA
GS
D
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002)
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18