Diodes CTA2N1P - Manual (Page 4)

DS30295 Rev. 7 - 2 4 of 6
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CTA2N1P
© Diodes Incorporated
MMBT4401 Section
1 0.1 10 100
V
, BA
SE EM
IT
T
E
R
V
O
L
T
A
G
E (V)
BE
(O
N
)
I , COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9 V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1 10 100 1,000
V,
C
O
LL
E
C
T
O
R
T
O
E
M
IT
T
E
R
S
A
T
URA
TI
O
N
VO
L
T
AG
E (
V
)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
NEW PROD
UC
T
1
10
100
1,000
1 10
I , COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
C
f,
100
G
AI
N
BA
N
D
WI
D
T
H
P
R
O
D
U
C
T
(
M
H
z)
T