Diodes CTA2N1P - Manual (Page 2)

DS30295 Rev. 7 - 2 2 of 6
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CTA2N1P
© Diodes Incorporated
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UC
T
Electrical Characteristics , Q1, MMBT4401 NPN Transistor Element
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V
(BR)CBO
60 ⎯ V I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6.0 ⎯ V I
E
= 100
μA, I
C
= 0
Collector Cutoff Current I
CEX
⎯ 100 nA V
CE
= 35V, V
EB(OFF)
= 0.4V
Base Cutoff Current I
BL
⎯ 100 nA V
CE
= 35V, V
EB(OFF)
= 0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I C = 150mA, V CE = 1.0V
I C = 500mA, V CE = 2.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage V
BE(SAT)
0.75
⎯
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
cb
⎯ 6.5 pF V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance C
eb
⎯ 30 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance h
ie
1.0 15 k
Ω
Voltage Feedback Ratio h
re
0.1 8.0 x 10 -4
Small Signal Current Gain h
fe
40 500 ⎯
Output Admittance h
oe
1.0 30 μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f
T
250 ⎯ MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time t
d
⎯ 15 ns
Rise Time t
r
⎯ 20 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
Storage Time t
s
⎯ 225 ns
Fall Time t
f
⎯ 30 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Electrical Characteristics , Q2, BSS84 P-Channel MOSFET Element
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BV DSS
-50 ⎯ ⎯ V V GS = 0V, I D = -250µA
Zero Gate Voltage Drain Current I
DSS
⎯
⎯
⎯ ⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
V DS = -50V, V GS = 0V, T J = 25
°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125 °C
V
DS
= -25V, V
GS
= 0V, T
J
= 25
°C
Gate-Body Leakage I
GSS
⎯ ⎯ ±10 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(th)
-0.8 ⎯ -2.0 V V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance R
DS (ON)
⎯ ⎯
10
Ω V
GS
= -5V, I
D
= 0.100A
Forward Transconductance g
FS
.05 ⎯ ⎯ S V
DS
= -25V, I
D
= 0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance C iss
⎯ ⎯ 45 pF
Output Capacitance C oss
⎯ ⎯ 25 pF
Reverse Transfer Capacitance C rss
⎯ ⎯ 12 pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)
⎯ 10 ⎯ ns
Turn-Off Delay Time t
D(OFF)
⎯ 18 ⎯ ns
V
DD
= -30V, I
D
= -0.27A,
R GEN = 50
Ω, V
GS = -10V
Notes: 5. Short duration pulse test used to minimize self-heating effect.